? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 600 v v dgr t j = 25 c to 150 c, r gs = 1m - 600 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 32 a i dm t c = 25 c, pulse width limited by t jm - 90 a i ar t c = 25 c - 32 a e as t c = 25 c 3.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting force (plus247) 20..120/4.5..27 n/lb. mounting torque (to-264) 1.13/10 nm/lb.in. weight plus247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 600 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss - 50 a v gs = 0v t j = 125 c - 250 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 350 m polarp tm power mosfet p-channel enhancement mode avalanche rated ixtk32p60p IXTX32P60P v dss = - 600v i d25 = - 32a r ds(on) 350m features z international standard packages z rugged polarp tm process z avalanche rated z low package inductance applications z high side switching z push-pull amplifiers z dc choppers z automatic test equipment g = gate d = drain s = source tab = drain (tab) g d s to-264 (ixtk) plus247 (ixtx) (tab) ds99990(5/08) preliminary technical information
ixtk32p60p IXTX32P60P ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 21 32 s c iss 11.1 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 925 pf c rss 77 pf t d(on) 37 ns t r 27 ns t d(off) 95 ns t f 33 ns q g(on) 196 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 54 nc q gd 58 nc r thjc 0.14 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 32 a i sm repetitive, pulse width limited by t jm -128 a v sd i f = -16a, v gs = 0v, note 1 - 2.8 v t rr 480 ns q rm 11.4 c i rm - 47.6 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = -16a, -di/dt = -150a/ s v r = -100v, v gs = 0v terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixtx) outline to-264 (ixtk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved ixtk32p60p IXTX32P60P fig. 1. output characteristics @ 25oc -32 -28 -24 -20 -16 -12 -8 -4 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ 25oc -70 -60 -50 -40 -30 -20 -10 0 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 v ds - volts i d - amperes v gs = -10v - 7v - 6 v - 5 v fig. 3. output characteristics @ 125oc -32 -28 -24 -20 -16 -12 -8 -4 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v -7v - 6 v - 5 v fig. 4. r ds(on) normalized to i d = -16a vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 32 a i d = -16 a fig. 5. r ds(on) normalized to i d = -16a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -70 -60 -50 -40 -30 -20 -10 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
ixtk32p60p IXTX32P60P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = - 300v i d = -16a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 100s r ds(on) limit - - -- dc, 100ms - - 1ms 10ms -
? 2008 ixys corporation, all rights reserved ixtk32p60p IXTX32P60P fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_32p60p(b9) 6-03-08
|
